| PART |
Description |
Maker |
| SBF13007 |
36W Bipolar Junction Transistor, 8A Ic, 400V Vceo, 700V Vces
|
SemiWell Semiconductor
|
| 30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
| CHT5338ZPT |
NPN Silicon Transisto r
|
Chenmko Enterprise Co. Ltd.
|
| S13003A |
Bipolar Junction Transistor
|
Shenzhen Jingdao Electr...
|
| JANSG2N2907AUBC JANSM2N2906A JANSM2N2906AL JANSM2N |
BJT( BiPolar Junction Transistor)
|
Microsemi
|
| JANSM2N3057A |
BJT( BiPolar Junction Transistor)
|
Microsemi
|
| 2N7371E3 |
BJT( BiPolar Junction Transistor)
|
Microsemi
|
| MJH16002A MJH16004 |
Bipolar Junction Transistor
NPN SILICON POWER TRANSISTORS
|
New Jersey Semiconductors
New Jersey Semi-Conductor P...
|
| MMBT2131T1-D |
General Purpose Transistors PNP Bipolar Junction Transistor (Complementary NPN Device: MMBT2132T1/T3) NOTE: Voltage and Current are negative for the PNP Transistor.
|
ON Semiconductor
|
| 1.5KE350 1.5KE7.5 1.5KE100 1.5KE400 1N6300 15KE 1. |
160 V, 1500 W, glass passivated junction transient voltage suppressor
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 玻璃钝化结瞬态电压抑制器
16-Bit Dual-Supply Bus Transceiver with Configurable Voltage Translation and 3-State Outputs 48-TSSOP -40 to 85
220 V, 1 mA, glass passivated junction transient voltage suppressor
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
|
TRANSYS Electronics Limited
Transys Electronics, Ltd.
Transys Electronics Ltd.
TRSYS
http://
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|
| 15SMC68CA 1.5SMC100CA 1.5SMC10CA 1.5SMC8.2CA 1.5SM |
BI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 1500 WATTS/ 6.8 THRU 200 VOLTS
Bi-Directional Glass Passivated Junction Transient Voltage Suppressors(击穿电压8.2V,双向玻璃钝化节点瞬变电压抑制
Bi-Directional Glass Passivated Junction Transient Voltage Suppressors(击穿电压7.5V,双向玻璃钝化节点瞬变电压抑制
Bi-Directional Glass Passivated Junction Transient Voltage Suppressors(击穿电压9.1V,双向玻璃钝化节点瞬变电压抑制
Bi-Directional Glass Passivated Junction Transient Voltage Suppressors(击穿电压13V,双向玻璃钝化节点瞬变电压抑制
Bi-Directional Glass Passivated Junction Transient Voltage Suppressors(击穿电压12V,双向玻璃钝化节点瞬变电压抑制
BI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 1500 WATTS, 6.8 THRU 200 VOLTS 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
Bi-Directional Glass Passivated Junction Transient Voltage Suppressors(?荤┛?靛?13V,????荤???????????靛??????
|
Central Semiconductor Corp.
Central Semiconductor, Corp.
Electronics Industry Public Company Limited
http://
Central Semiconductor C...
|
